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dc.contributor.authorBorschak, V.A.-
dc.contributor.authorVilinskaya, L.N.-
dc.contributor.authorKutalova, M.I.-
dc.contributor.authorZatovskaya, N.P.-
dc.contributor.authorKarpenko, A.O.-
dc.date.accessioned2020-12-14T11:48:34Z-
dc.date.available2020-12-14T11:48:34Z-
dc.date.issued2016-
dc.identifier.urihttp://mx.ogasa.org.ua/handle/123456789/9040-
dc.description.abstractAbnormal dependence of volt-farad characteristics of "nonideal" heterojunctin barrier capacity is investigated. It is shown that in heterojunctions with the big concentration and non-uniform distribution of defects tunnel currents essentially influence on the barrier capacity sizeuk_UA
dc.subjectHeterojunctionsuk_UA
dc.subjectbarrier capacityuk_UA
dc.subjecttunneling-recombination mechanismuk_UA
dc.subjectvolt-farad characteristicuk_UA
dc.titleFeatures of volt-farad dependence of nonideal heterojunctions barrier capacityuk_UA
dc.typeOtheruk_UA
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